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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 1/4
HLB123D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications.
Features
* High Speed Switching * Low Saturation Voltage * High Reliability
TO-126ML
Absolute Maximum Ratings (Ta=25C)
* Maximum Temperatures Storage Temperature ........................................................................................................ -50 ~ +150 C Junction Temperature ................................................................................................ +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 30 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 8 V IC Collector Current (DC) .................................................................................................................. 1 A IC Collector Current (Pulse) .............................................................................................................. 2 A
Electrical Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Ton Tstg Toff Min. 600 400 8 10 10 6 Typ. 0.4 2.4 0.3 Max. 10 10 0.8 0.9 1.2 1.8 50 1.1 4 0.7 Unit V V V uA uA V V V V Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30Ma IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test : Pulse Width 380us, Duty Cycle2%
uS uS uS
Classification Of hFE1
Rank Range B1 10-17 B2 13-22 B3 18-27 B4 23-32 B5 28-37 B6 33-42 B7 38-47 B8 43-50
HLB123D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100 125 C
o
Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 2/4
Saturation Voltage & Collector Current
10000
25 C 75 C
o
o
Saturation Voltage (mV)
1000
75 C
o
hFE
10
100 25 C
o
125 C
o
hFE @ VCE=5V
VCE(sat) @ IC=10IB 10
1 1 10 100 1000 10000
1
10
100
1000
10000
Collector Current IC (mA)
Collector Current IC (mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1000
Saturation Voltage (mV)
VBE(on) @ VCE=5V
75 C 1000 25 C
o
o
125 C VBE(s at) @ IC=10IB 100 1 10 100 1000 10000
o
On Voltage (mV)
100 1 10 100 1000
Collector Current IC (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Volatge
100 10.0
Switching Time & Collector Current
VCC=100V, IC=5IB1 =-5IB2
10
Cob
Switching Time (us)
Tstg
Capacitance (pF)
1.0
Tf
Ton 1 0.1 1 10 100 0.1 0.1 1.0
Reverse-Biased Voltage (V)
Collector Current (A)
HLB123D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 3/4
Safe Operating Area
10000
Collector Current (mA)
1000
PT=1ms 100 PT=100ms PT=1s
10 1 10 100 1000
Forward Voltage (V)
HLB123D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 4/4
A
H
LB B
B D E F 3 2 I G 1 J M L K O H
Date Code
123D Control Code
Rank would show on label Style: Pin 1.Emitter 2.Collector 3.Base
C
N
3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical
DIM A B C D E F G H
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
DIM I J K L M N O
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB123D
HSMC Product Specification

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